https://scholars.lib.ntu.edu.tw/handle/123456789/630417
標題: | Variation-Tolerant Recall Operation for Nonvolatile SRAM Integrated with Ferroelectric Capacitor | 作者: | Li, Ai Fang Huang, Ruei Yu VITA PI-HO HU |
關鍵字: | ferroelectric capacitor | nonvolatile SRAM (NV-SRAM) | variation-tolerant | 公開日期: | 1-一月-2022 | 來源出版物: | 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 | 摘要: | We proposed a variation-tolerant recall scheme for nonvolatile 6T SRAM (NV-SRAM) integrated with two ferroelectric capacitors. Two recall schemes (Type-1 and Type-2) are analyzed considering the impact of threshold voltage mismatch in SRAM cells. The proposed recall scheme (Type-2) shows higher variation immunity as the coercive electric field (Ec) reduces and remanent polarization (Pr) increases. The Type-2 recall scheme with optimized ferroelectric parameters can tolerate 110 mV threshold voltage mismatch, which is 4.23 times larger than the Type-1 recall scheme. The proposed variation-tolerant NV-SRAM with ferroelectric capacitors is a promising solution for ultralow-power embedded memory applications. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/630417 | ISBN: | 9781665421775 | DOI: | 10.1109/EDTM53872.2022.9798000 |
顯示於: | 電機工程學系 |
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