https://scholars.lib.ntu.edu.tw/handle/123456789/632029
標題: | High-quality AlN epilayers prepared by atomic layer deposition and large-area rapid electron beam annealing | 作者: | Kao, Wei Chung Jhong, Fong Jyun Yin, Yu Tung HSIN-CHIH LIN MIIN-JANG CHEN |
關鍵字: | Aluminum nitride | Atomic layer deposition | Electron beam annealing | Epitaxy | 公開日期: | 1-八月-2023 | 卷: | 304 | 來源出版物: | Materials Chemistry and Physics | 摘要: | Low-temperature atomic layer deposition and high-temperature electron beam annealing (EBA) are used to achieve high-quality epitaxial AlN layers. Efficient energy transfer from the single exposure for only 1 min of electron irradiation with a large area contributes to substantial improvement in the film density and crystal quality of AlN thin films, as demonstrated by the X-ray reflectivity and the θ-2θ/ω-scan X-ray diffraction. High-resolution transmission electron microscopy indicates well-arranged lattice fringes in the epitaxial AlN layer on a sapphire substrate. A low surface roughness of the AlN epilayer, as revealed by the atomic force microscopy, suggests that the damage induced by the EBA treatment is insignificant. The outcomes indicate that the large-area rapid EBA is a low-damage and efficient technique for the recrystallization of thin films prepared at low temperatures. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/632029 | ISSN: | 02540584 | DOI: | 10.1016/j.matchemphys.2023.127895 |
顯示於: | 材料科學與工程學系 |
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