Strain relaxation induced micro-photoluminescence haracteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling
Journal
ECS Transactions
Journal Volume
16
Journal Issue
7
Pages
139-143
Date Issued
2009
Author(s)
Abstract
A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ∼200meV. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the asgrown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range. © The Electrochemical Society.
Other Subjects
Blue shift; Energy gap; Focused ion beams; III-V semiconductors; Milling (machining); Nanopillars; Nitrides; Photoluminescence; Semiconductor quantum wells; Focused ion beam milling; High-efficiency; Micro photoluminescence; Nano device; PL measurements; Radiative recombination rate; Strain-relaxed; Wavelength ranges; Wide band gap semiconductors
Type
conference paper