Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor
Journal
Micromachines
Journal Volume
13
Journal Issue
4
Date Issued
2022
Author(s)
Abstract
In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.
Subjects
Ambient condition; CNT; Factor; Graphene; Hysteresis; Improvement; Mechanism; Nano-structure material
Other Subjects
Carbon nanotube field effect transistors; Carbon nanotubes; Graphene; Graphene transistors; Ambient conditions; Carbon nano-structures; CNT; Factor; Field-effect transistor; Improvement; Nano-structures; Optical and mechanical properties; Rapid growth; Thermal-optical; Hysteresis
Type
journal article