https://scholars.lib.ntu.edu.tw/handle/123456789/632135
標題: | Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor | 作者: | Lu Y.-X CHIH-TING LIN Tsai M.-H Lin K.-C. |
關鍵字: | Ambient condition; CNT; Factor; Graphene; Hysteresis; Improvement; Mechanism; Nano-structure material | 公開日期: | 2022 | 卷: | 13 | 期: | 4 | 來源出版物: | Micromachines | 摘要: | In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry. © 2022 by the authors. Licensee MDPI, Basel, Switzerland. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85129776888&doi=10.3390%2fmi13040509&partnerID=40&md5=8a607d71abce47a689444de3ae7f6deb https://scholars.lib.ntu.edu.tw/handle/123456789/632135 |
ISSN: | 2072666X | DOI: | 10.3390/mi13040509 | SDG/關鍵字: | Carbon nanotube field effect transistors; Carbon nanotubes; Graphene; Graphene transistors; Ambient conditions; Carbon nano-structures; CNT; Factor; Field-effect transistor; Improvement; Nano-structures; Optical and mechanical properties; Rapid growth; Thermal-optical; Hysteresis |
顯示於: | 電機工程學系 |
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