Development of Highly Manufacturable, Reliable, and Energy-Efficient Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM)
Journal
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Date Issued
2022
Author(s)
Rahaman S.Z
Chang Y.-J
Hsin Y.-C
Yang S.-Y
Chen F.-M
Chen K.-M
Wang I.-J
Lee H.-H
Chen G.-L
Su Y.-H
Shih C.-Y
Chiu S.-C
Wei J.-H
Yen S.-C
Huang K.-C
Chen C.-C
Chen M.-C
Sheu S.-S
Lo W.-C
Chang S.-Z
See Y.-C
Deng D.-L
CHIH-I WU
Abstract
We demonstrate highly manufacturable, reliable, and energy-efficient SOT-MRAM by developing damage-free reactive-ion etching (RIE) recipes. The experimental results demonstrate that C-F Etch lowers the CoFeB/MgO interfacial anisotropy, partially destroys the magnetic moment of CoFeB, and the post-etch annealing further degrades the magnetic moment. On the other hand, N-H Etch hardly changes the stack magnetic property. The present process technology allows to etch uniformly stop on the thin heavy-metal (HM) layer and resulting in a low SOT-channel resistance <250O. A statistical full wafer-level study of the SOT switching properties such as TMR%, SOT-channel resistance, P2AP/AP2P voltages, and P/AP-state resistances has been explored. © 2022 IEEE.
Other Subjects
Cobalt compounds; Energy efficiency; Heavy metals; Iron compounds; Magnetic anisotropy; Magnetic recording; MRAM devices; Channel resistance; Damage-free; Energy efficient; Magnetic random access memory; Metal layer; Process Technologies; Reactive-ion etching; Spin orbits; Switching properties; Wafer level; Magnetic moments
Type
conference paper