|Title:||Development of Highly Manufacturable, Reliable, and Energy-Efficient Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM)||Authors:||Rahaman S.Z
|Issue Date:||2022||Source:||2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022||Abstract:||
We demonstrate highly manufacturable, reliable, and energy-efficient SOT-MRAM by developing damage-free reactive-ion etching (RIE) recipes. The experimental results demonstrate that C-F Etch lowers the CoFeB/MgO interfacial anisotropy, partially destroys the magnetic moment of CoFeB, and the post-etch annealing further degrades the magnetic moment. On the other hand, N-H Etch hardly changes the stack magnetic property. The present process technology allows to etch uniformly stop on the thin heavy-metal (HM) layer and resulting in a low SOT-channel resistance <250O. A statistical full wafer-level study of the SOT switching properties such as TMR%, SOT-channel resistance, P2AP/AP2P voltages, and P/AP-state resistances has been explored. © 2022 IEEE.
|DOI:||10.1109/VLSI-TSA54299.2022.9771005||SDG/Keyword:||Cobalt compounds; Energy efficiency; Heavy metals; Iron compounds; Magnetic anisotropy; Magnetic recording; MRAM devices; Channel resistance; Damage-free; Energy efficient; Magnetic random access memory; Metal layer; Process Technologies; Reactive-ion etching; Spin orbits; Switching properties; Wafer level; Magnetic moments|
|Appears in Collections:||電機工程學系|
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