https://scholars.lib.ntu.edu.tw/handle/123456789/632149
Title: | Development of Highly Manufacturable, Reliable, and Energy-Efficient Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) | Authors: | Rahaman S.Z Chang Y.-J Hsin Y.-C Yang S.-Y Chen F.-M Chen K.-M Wang I.-J Lee H.-H Chen G.-L Su Y.-H Shih C.-Y Chiu S.-C Wei J.-H Yen S.-C Huang K.-C Chen C.-C Chen M.-C Sheu S.-S Lo W.-C Chang S.-Z See Y.-C Deng D.-L CHIH-I WU |
Issue Date: | 2022 | Source: | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | Abstract: | We demonstrate highly manufacturable, reliable, and energy-efficient SOT-MRAM by developing damage-free reactive-ion etching (RIE) recipes. The experimental results demonstrate that C-F Etch lowers the CoFeB/MgO interfacial anisotropy, partially destroys the magnetic moment of CoFeB, and the post-etch annealing further degrades the magnetic moment. On the other hand, N-H Etch hardly changes the stack magnetic property. The present process technology allows to etch uniformly stop on the thin heavy-metal (HM) layer and resulting in a low SOT-channel resistance <250O. A statistical full wafer-level study of the SOT switching properties such as TMR%, SOT-channel resistance, P2AP/AP2P voltages, and P/AP-state resistances has been explored. © 2022 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85130463886&doi=10.1109%2fVLSI-TSA54299.2022.9771005&partnerID=40&md5=d07e71f7a7f6a00b2162cb0b66d5b244 https://scholars.lib.ntu.edu.tw/handle/123456789/632149 |
DOI: | 10.1109/VLSI-TSA54299.2022.9771005 | SDG/Keyword: | Cobalt compounds; Energy efficiency; Heavy metals; Iron compounds; Magnetic anisotropy; Magnetic recording; MRAM devices; Channel resistance; Damage-free; Energy efficient; Magnetic random access memory; Metal layer; Process Technologies; Reactive-ion etching; Spin orbits; Switching properties; Wafer level; Magnetic moments |
Appears in Collections: | 電機工程學系 |
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