Optical properties of InN-based photodetection devices
Journal
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Date Issued
2015
Author(s)
Abstract
The InN capped with GaN structures is promising for extended visible and infrared absorption. The low growth temperature of GaN/InN epitaxy was fabricated by a low-pressure metal organic chemical vapor deposition system. The strain effect and mixed InxGa1-xN complex of the GaN/InN layer were investigated via Raman and photoluminescence (PL) measurements. The capping GaN with similar growth temperature of previous InN growth induces the gallium diffusion mechanism to form InxGa1-xN complex. The blue-shift phenomenon of multiple GaN/InN peaks with increasing growth temperature was attributed to residual strain and higher Ga content of InGaN. A ZnO/GaN/InN photodetection device is demonstrated with extended IR response, and the quantum efficiency is 2.28%. © 2015 IEEE.
Subjects
Indium compounds; Infrared; nanostructured materials; photodetection devices
Other Subjects
Epitaxial growth; Growth temperature; Indium compounds; Infrared radiation; Light absorption; Metallorganic chemical vapor deposition; Nanostructured materials; Optical properties; Organic chemicals; Organometallics; Photodetectors; Semiconductor quantum wells; Blue shift phenomenon; Gallium diffusion; Low growth temperature; Low-pressure metal-organic chemical vapor depositions; Photo detection; Photoluminescence measurements; Residual strains; Strain effect; Gallium nitride
Type
conference paper