Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching
Journal
IEEE Electron Device Letters
Journal Volume
43
Journal Issue
5
Pages
682-685
Date Issued
2022
Author(s)
Abstract
A novel TreeFET architecture as a combination of stacked nanosheets and additional fin interbridges between nanosheets can enhance ION per footprint. The straight sidewalls of interbridges requires {110} sidewalls, which can be fabricated using n+ Ge/Ge0.95Si0.05/Ge epitaxial layers with co-optimization of wet etching. The TreeFET with {110} interbridges has ION per footprint of $870~\mu \text{A}/\mu \text{m}$ at VOV=VDS=0.5V (2.1X of the referenced 3 stacked nanosheets). To minimize the impurity scattering in the interbridges, the 400 °C annealing is used to drive phosphorus in interbridges into the nanosheets, while the low source/drain resistance is still maintained. The increasing ION down to 77 K indicates that the phonon scattering dominates, and the impurity scattering is minimized in the interbridge channels. © 1980-2012 IEEE.
Subjects
Chemical vapor deposition (CVD); FinFET; Ge; GeSi; interbridge; nanosheet; phosphorus; TreeFET; wet etching
Other Subjects
Chemical vapor deposition; FinFET; Forestry; Ions; Phosphorus; Semiconductor alloys; Silicon alloys; Wet etching; Chemical vapor deposition; Chemical vapour deposition; Co-optimization; Experimental demonstrations; Ge; Germaniums (Ge); Impurity scattering; Interbridge; Source/drain resistances; TreeFET; Nanosheets
Type
journal article