https://scholars.lib.ntu.edu.tw/handle/123456789/632207
標題: | Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching | 作者: | Tu C.-T Hsieh W.-H Huang B.-W Chen Y.-R Liu Y.-C Tsai C.-E Chueh S.-J CHEE-WEE LIU |
關鍵字: | Chemical vapor deposition (CVD); FinFET; Ge; GeSi; interbridge; nanosheet; phosphorus; TreeFET; wet etching | 公開日期: | 2022 | 卷: | 43 | 期: | 5 | 起(迄)頁: | 682-685 | 來源出版物: | IEEE Electron Device Letters | 摘要: | A novel TreeFET architecture as a combination of stacked nanosheets and additional fin interbridges between nanosheets can enhance ION per footprint. The straight sidewalls of interbridges requires {110} sidewalls, which can be fabricated using n+ Ge/Ge0.95Si0.05/Ge epitaxial layers with co-optimization of wet etching. The TreeFET with {110} interbridges has ION per footprint of $870~\mu \text{A}/\mu \text{m}$ at VOV=VDS=0.5V (2.1X of the referenced 3 stacked nanosheets). To minimize the impurity scattering in the interbridges, the 400 °C annealing is used to drive phosphorus in interbridges into the nanosheets, while the low source/drain resistance is still maintained. The increasing ION down to 77 K indicates that the phonon scattering dominates, and the impurity scattering is minimized in the interbridge channels. © 1980-2012 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85126521728&doi=10.1109%2fLED.2022.3159268&partnerID=40&md5=c87e9ce8dc593189865716df3201a904 https://scholars.lib.ntu.edu.tw/handle/123456789/632207 |
ISSN: | 7413106 | DOI: | 10.1109/LED.2022.3159268 | SDG/關鍵字: | Chemical vapor deposition; FinFET; Forestry; Ions; Phosphorus; Semiconductor alloys; Silicon alloys; Wet etching; Chemical vapor deposition; Chemical vapour deposition; Co-optimization; Experimental demonstrations; Ge; Germaniums (Ge); Impurity scattering; Interbridge; Source/drain resistances; TreeFET; Nanosheets |
顯示於: | 電機工程學系 |
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