https://scholars.lib.ntu.edu.tw/handle/123456789/632212
標題: | Abnormal threshold voltage shift of amorphous InGaZnO thin-film transistors due to mobile sodium | 作者: | Lo C Feng Z.-L Huang W.-L CHEE-WEE LIU Chen T.-L Chou C.-H. |
關鍵字: | abnormal VT shift; InGaZnO; mobile charge; negative bias stress; thin film transistor | 公開日期: | 2016 | 卷: | 4 | 期: | 5 | 起(迄)頁: | 353-357 | 來源出版物: | IEEE Journal of the Electron Devices Society | 摘要: | The negative bias stress normally yields a negative threshold voltage shift of the thin film transistors due to the additional positive charges trapped in the gate dielectrics or at channel/gate insulator interface. However, a positive threshold voltage shift of the device with the post InGaZnO deposition annealing at 400 °C is observed in our devices. The Na+ incorporation from Mo gate into the gate dielectric after 400 °C annealing is responsible for this abnormal threshold voltage shift. The movement of Na+ ions toward the gate electrode by the negative gate bias decreases the distance between the gate electrode and the Na+ ions. Therefore, the voltage drop between the gate electrode and the Na+ ions reduces, and a corresponding positive threshold voltage shift is observed. Inserting a SiNx layer between the SiOx gate insulator and the Mo gate electrode can reduce the Na+ mobility, and thus a normal negative threshold voltage shift resumes. © 2013 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984706674&doi=10.1109%2fJEDS.2016.2562675&partnerID=40&md5=130f89ed26a24ba6513736fcba8a6b8d https://scholars.lib.ntu.edu.tw/handle/123456789/632212 |
ISSN: | 21686734 | DOI: | 10.1109/JEDS.2016.2562675 | SDG/關鍵字: | Amorphous films; Bias voltage; Computer circuits; Dielectric materials; Electrodes; Gate dielectrics; Interfaces (materials); Ions; Reconfigurable hardware; Semiconducting organic compounds; Silicon nitride; Thin film circuits; Thin film transistors; Thin films; abnormal VT shift; Amorphous InGaZnO; Gate electrodes; InGaZnO; Mobile charge; Negative bias; Positive charges; Threshold voltage shifts; Threshold voltage |
顯示於: | 電機工程學系 |
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