An analytical velocity overshoot model for 0.1 μm N-channel metal-oxide-silicon devices considering energy transport
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
35
Journal Issue
5 SUPPL. A
Pages
2573-2577
Date Issued
1996
Author(s)
Abstract
We report an analytical velocity overshoot model for 0.1μm N-channel metal-oxide-silicon (NMOS) devices taking into account energy transport. As verified by 2D simulation results, the analytical velocity overshoot model gives a good prediction of the IV characteristics.
Subjects
Deep submicron; Energy transport; NMOS; Relaxation time; Velocity overshoot
Other Subjects
Computer simulation; Current density; Electron energy levels; Electronic density of states; Energy transfer; Mathematical techniques; Relaxation processes; Semiconductor device models; Transport properties; Analytical velocity overshoot model; Deep submicron; Energy balance equation; Energy transport; Model derivation; Relaxation time; Two dimensional simulation; Velocity overshoot; MOS devices
Type
journal article