https://scholars.lib.ntu.edu.tw/handle/123456789/632283
標題: | Comparison of 4T and 6T FinFET SRAM cells for subthreshold operation considering variability-A model-based approach | 作者: | Fan M.-L Wu Y.-S VITA PI-HO HU Hsieh C.-Y Su P Chuang C.-T. |
關鍵字: | Fin-shaped field-effect transistor (FinFET); static noise margin (SNM); subthreshold static random access memory (SRAM); variability | 公開日期: | 2011 | 卷: | 58 | 期: | 3 | 起(迄)頁: | 609-616 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | This paper investigates the cell stability of recently introduced four-transistor (4T) and conventional six-transistor (6T) fin-shaped field-effect transistor static random access memory (SRAM) cells operating in a subthreshold region using an efficient model-based approach to consider the impact of device variations. Compared with the 6T cell, this paper indicates that 4T SRAM cells exhibit a better nominal read static noise margin (RSNM) because of the reduced read disturb. For 4T cells, the nearly ideal values of Vwrite, 0 and Vwrite, 1 guarantee the positive nominal write static noise margin (WSNM) for selected cells. For half-selected cells on the selected bit line, a sufficient margin is observed between write time (for selected cells) and write disturb (for half-selected cells). Using the established model-based approach, the variability of subthreshold 6T and 4T SRAM cells is assessed with 1000 samples. Our results indicate that the 4T driverless cell with a larger μRSNM and a slightly worse σRSNM shows a comparable μ/σ ratio in RSNM with the 6T cell. Furthermore, for a given cell area, 4T SRAM cells using relaxed device dimensions with reduced σRSNM can outperform the 6T cell. For write operation, 4T SRAM cells exhibit a superior WSNM, whereas the design margin between write time and write disturb needs to be carefully examined to ensure an adequate margin considering device variability. © 2011 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-79952038442&doi=10.1109%2fTED.2010.2096225&partnerID=40&md5=b66cbf69367aecad85b243d0aea116ce https://scholars.lib.ntu.edu.tw/handle/123456789/632283 |
ISSN: | 189383 | DOI: | 10.1109/TED.2010.2096225 | SDG/關鍵字: | 4-T cell; 4T SRAM; 6T-cell; Bit lines; Cell stability; Design margin; Device variations; Ideal values; Model based approach; Read disturb; SRAM Cell; Static noise margin; static noise margin (SNM); Static random access memory; Subthreshold; Subthreshold operation; Subthreshold region; variability; Write operations; Cells; Cytology; Field effect transistors; Fins (heat exchange); Integrated circuits; Static random access storage |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。