Impact of quantum confinement on short-channel effects for ultrathin-body germanium-on-insulator MOSFETs
Journal
IEEE Electron Device Letters
Journal Volume
32
Journal Issue
1
Pages
18-20
Date Issued
2011
Author(s)
Abstract
This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and thin-buried-oxide germanium-on-insulator (GeOI) MOSFETs using an analytical solution of Schrdinger equation verified with TCAD simulation. Our study indicates that, although the QC effect increases the threshold voltage (Vth) roll-off when the channel thickness (Tch) is larger than a critical value (T ch,crit), it may decrease the Vth roll-off of GeOI MOSFETs when the Tch is smaller than Tch,crit. Since Ge and Si channels exhibit different degrees of confinement and Tch,crit, the impact of QC must be considered when one-to-one comparisons between UTB GeOI and Si-on-insulator MOSFETs regarding the SCE are made. © 2010 IEEE.
Subjects
Germanium-on-insulator (GeOI); quantum confinement (QC); threshold voltage roll-off
Other Subjects
Analytical solutions; Buried oxides; Channel thickness; Critical value; Germanium-on-insulator; MOSFETs; Schrdinger equations; Short-channel effect; Si-on-insulator; TCAD simulation; threshold voltage roll-off; Ultra-thin-body; Flight dynamics; Germanium; MOSFET devices; Quantum confinement; Threshold voltage; Semiconducting silicon compounds
Type
conference paper