https://scholars.lib.ntu.edu.tw/handle/123456789/632288
標題: | Impact of quantum confinement on short-channel effects for ultrathin-body germanium-on-insulator MOSFETs | 作者: | Wu Y.-S Hsieh H.-Y VITA PI-HO HU Su P. |
關鍵字: | Germanium-on-insulator (GeOI); quantum confinement (QC); threshold voltage roll-off | 公開日期: | 2011 | 卷: | 32 | 期: | 1 | 起(迄)頁: | 18-20 | 來源出版物: | IEEE Electron Device Letters | 摘要: | This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and thin-buried-oxide germanium-on-insulator (GeOI) MOSFETs using an analytical solution of Schrdinger equation verified with TCAD simulation. Our study indicates that, although the QC effect increases the threshold voltage (Vth) roll-off when the channel thickness (Tch) is larger than a critical value (T ch,crit), it may decrease the Vth roll-off of GeOI MOSFETs when the Tch is smaller than Tch,crit. Since Ge and Si channels exhibit different degrees of confinement and Tch,crit, the impact of QC must be considered when one-to-one comparisons between UTB GeOI and Si-on-insulator MOSFETs regarding the SCE are made. © 2010 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650863623&doi=10.1109%2fLED.2010.2089425&partnerID=40&md5=229600740b32f573836b91b457b84d86 https://scholars.lib.ntu.edu.tw/handle/123456789/632288 |
ISSN: | 7413106 | DOI: | 10.1109/LED.2010.2089425 | SDG/關鍵字: | Analytical solutions; Buried oxides; Channel thickness; Critical value; Germanium-on-insulator; MOSFETs; Schrdinger equations; Short-channel effect; Si-on-insulator; TCAD simulation; threshold voltage roll-off; Ultra-thin-body; Flight dynamics; Germanium; MOSFET devices; Quantum confinement; Threshold voltage; Semiconducting silicon compounds |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。