https://scholars.lib.ntu.edu.tw/handle/123456789/632290
標題: | Investigation of BTI reliability for monolithic 3D 6T SRAM with ultra-thin-body GeOI MOSFETs | 作者: | VITA PI-HO HU Su P Chuang C.-T. |
關鍵字: | GeOI; interlayer coupling; monolithic 3D integration; NBTI; PBTI; SRAM cell; Ultra-thin-body (UTB) | 公開日期: | 2016 | 卷: | 2016-July | 起(迄)頁: | 2106-2109 | 來源出版物: | Proceedings - IEEE International Symposium on Circuits and Systems | 摘要: | This paper investigates the impacts of negative and positive bias temperature instabilities (NBTI and PBTI) on the stability and performance of ultra-thin-body (UTB) GeOI 6T SRAM cells integrated in monolithic 3D scheme with interlayer coupling. Various bitcell layouts with different gate alignments of transistors from distinct layers are investigated. The worst case stress scenarios for read and write operations are analyzed. The optimized monolithic 3D UTB GeOI SRAM with the pulldown NFET tier stacked over the pull-up PFET tier and under forward PFET back-gate bias shows improvements in read stability and cell read-access time compared with the 2D UTB GeOI SRAM. Monolithic 3D UTB GeOI SRAM with high threshold voltage (Vth) design can enhance the improvements in stability and performance over 2D SRAM. Moreover, the optimized monolithic 3D UTB GeOI SRAM can mitigate the temporal degradations in stability and performance due to BTI stress because the BTI induced Vth degradations can be suppressed by interlayer coupling in monolithic 3D scheme. © 2016 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84983416287&doi=10.1109%2fISCAS.2016.7538995&partnerID=40&md5=dc7d4ef3e0d3f15544f827c16c69caef https://scholars.lib.ntu.edu.tw/handle/123456789/632290 |
ISSN: | 2714310 | DOI: | 10.1109/ISCAS.2016.7538995 | SDG/關鍵字: | Reconfigurable hardware; Stability; Threshold voltage; 3-D integration; GeOI; Interlayer coupling; NBTI; PBTI; SRAM Cell; Ultra-thin-body; Static random access storage |
顯示於: | 電機工程學系 |
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