https://scholars.lib.ntu.edu.tw/handle/123456789/632400
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hirayama Y | en-US |
dc.contributor.author | Smet J.H | en-US |
dc.contributor.author | LUNG-HAN PENG | en-US |
dc.contributor.author | Fonstad C.G | en-US |
dc.contributor.author | Ippen E.P. | en-US |
dc.creator | Hirayama Y;Smet J.H;Peng L.-H;Fonstad C.G;Ippen E.P. | - |
dc.date.accessioned | 2023-06-09T07:52:55Z | - |
dc.date.available | 2023-06-09T07:52:55Z | - |
dc.date.issued | 1994 | - |
dc.identifier.issn | 214922 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028259385&doi=10.1143%2fJJAP.33.890&partnerID=40&md5=a600a53ca2cf04b26933d9e578bc8c50 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/632400 | - |
dc.description.abstract | We propose to use 1.55 μm intersubband transitions as a key mechanism for novel photonic devices such as fast photonic switches which are applicable to current optical communication systems. The calculation of carrier relaxation times shows a few picosecond switching time for 1.55 μm intersubband transitions. The well-width dependence of intersubband transition energies in InGaAs/AlAs pseudomorphic quantum well structures has been studied to realize 1.55 μm intersubband transitions. © 1994 Japanese Journal of Applied Physics. All rights reserved. | - |
dc.relation.ispartof | Japanese Journal of Applied Physics | - |
dc.subject | Carrier relaxation time; Intersubband transition; Optical communication system; Photonic switch; Pseudomorphic quantum well | - |
dc.subject.other | Band structure; Charge carriers; Electron transitions; Nonlinear optics; Optical communication; Relaxation processes; Semiconducting aluminum compounds; Semiconducting indium compounds; Semiconductor device structures; Semiconductor quantum wells; Switching; Ultrafast phenomena; Carrier relaxation time; Indium gallium arsenide/aluminum arsenide; Intersubband transitions; Optical communication systems; Optical nonlinearity; Photonic devices; Pseudomorphic quantum well structures; Optical switches | - |
dc.title | Feasibility of 1.55 μm intersubband photonic devices using InGaAs/alas pseudomorphic quantum well structures | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1143/JJAP.33.890 | - |
dc.identifier.scopus | 2-s2.0-0028259385 | - |
dc.relation.pages | 890-895 | - |
dc.relation.journalvolume | 33 | - |
dc.relation.journalissue | 1 | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
Appears in Collections: | 電機工程學系 |
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