Concise short-channel effect model for inversion-type ultrathin silicon-on-insulator p-channel metal-oxide-silicon field-effect transistors based on partitioning of thin-film
Journal
Japanese Journal of Applied Physics
Journal Volume
34
Journal Issue
12
Pages
6340-6345
Date Issued
1995
Author(s)
Chen S.-S
Abstract
This paper reports a concise short-channel effect model for inversion-type ultrathin silicon-on-insulator (SOI) metal-oxide-silicon field-effect transistors (MOSFETs). As verified by the 2D simulation data, the concise short- channel effect model based on partitioning of the thin-film region provides a good prediction. According to the analytical model, the short-channel effect is strongly influenced by its thin-film thickness. © 1995 The Japan Society of Applied Physics.
Subjects
Field-effect transistor; Metal-oxide-silicon; Short-channel effect; Silicon-on-insulator; Thin-film
Other Subjects
Computer simulation; Gates (transistor); Semiconductor device models; Silicon on insulator technology; Thin films; Concise short channel effect model; Inversion type ultrathin silicon on insulator; Metal oxide silicon; Partitioning; Poisson equations; Short channel effect; Thin film thickness; Two dimensional simulation data; MOSFET devices
Type
journal article