InP-Based HBT Technology for Millimeter-Wave MMIC VCOs
Journal
Technical Digest - International Electron Devices Meeting, IEDM
Pages
199-202
Date Issued
1996
Author(s)
Abstract
The first fundamental frequency W-band oscillator based on bipolar technology has been demonstrated. Using InP HBT MMIC technology with ft=70 GHz and fmax=185 GHz, the oscillator operated at 94.3 GHz with a 400 MHz tuning bandwidth delivering P0Ut=-8dBm. This technology enables compact, low noise tunable frequency sources targeting future millimeter-wave applications. ©© 1996 IEEE
SDGs
Other Subjects
Heterojunction bipolar transistors; Indium phosphide; Millimeter waves; Monolithic microwave integrated circuits; Semiconducting indium phosphide; Fabrication; Millimeter waves; Molecular beam epitaxy; Monolithic microwave integrated circuits; Semiconducting indium phosphide; Semiconductor device structures; Variable frequency oscillators; Bipolar technology; Frequency source; Fundamental frequencies; HBT technology; InP-HBT; Lower noise; Millimeter-wave MMIC; MMIC technology; Tunable frequency; W bands; III-V semiconductors; Heterojunction bipolar transistors; Millimeter wave oscillator; W band oscillator
Type
conference paper