https://scholars.lib.ntu.edu.tw/handle/123456789/632704
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Yu Rui | en_US |
dc.contributor.author | Zhao, Zefu | en_US |
dc.contributor.author | Tu, Chien Te | en_US |
dc.contributor.author | Liu, Yi Chun | en_US |
dc.contributor.author | Huang, Bo Wei | en_US |
dc.contributor.author | Xing, Yifan | en_US |
dc.contributor.author | Chen, Guan Hua | en_US |
dc.contributor.author | CHEE-WEE LIU | en_US |
dc.date.accessioned | 2023-06-15T03:35:25Z | - |
dc.date.available | 2023-06-15T03:35:25Z | - |
dc.date.issued | 2022-10-01 | - |
dc.identifier.issn | 07413106 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/632704 | - |
dc.description.abstract | The HfxZryO2 with high Zr content is demonstrated to form the anti-ferroelectric tetragonal phase (AFE t-phase). The peak dielectric constant (47) of Hf0.2Zr0.8O2 is achieved. By taking advantage of the high dielectric constant, the Hf0.2Zr0.8O2 is used in the gate stack on the high mobility Ge0.98Si0.02 channel to significantly enhance the drive current. Stacked two Ge0.98Si0.02 gate-all-around nanowires can have high ION per perimeter of 740∼\μ Aμ m at VOV= VDS= 0.5V. The thermal budget is as low as 450 °C. | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.relation.ispartof | IEEE Electron Device Letters | en_US |
dc.subject | Anti-ferroelectric (AFE) | GeSi | high-ΰ | nanowires (NWs) | en_US |
dc.title | IONEnhancement of Ge0.98Si0.02Nanowire nFETs by High-κ Dielectrics | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/LED.2022.3201972 | - |
dc.identifier.scopus | 2-s2.0-85137547247 | - |
dc.identifier.isi | WOS:000861441600006 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85137547247 | - |
dc.relation.pages | 1601 | en_US |
dc.relation.journalvolume | 43 | en_US |
dc.relation.journalissue | 10 | en_US |
dc.relation.pageend | 1604 | en_US |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.dept | Center for Artificial Intelligence and Advanced Robotics | - |
crisitem.author.orcid | 0000-0002-6439-8754 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
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