|Title:||Effective out-of-plane g factor in strained-Ge/SiGe quantum dots||Authors:||Miller, Andrew J.
Hardy, Will J.
Luhman, Dwight R.
Liu, Chia You
Lilly, Michael P.
Lu, Tzu Ming
|Keywords:||ELECTRON; QUBITS; Physics - Mesoscopic Systems and Quantum Hall Effect; Physics - Mesoscopic Systems and Quantum Hall Effect||Issue Date:||15-Sep-2022||Publisher:||AMER PHYSICAL SOC||Journal Volume:||106||Journal Issue:||12||Source:||Physical Review B||Abstract:||
Lithographic quantum dots in strained-Ge/SiGe have rapidly progressed from the realization of a single-hole quantum dot to multiqubit devices. We present a measurement of the out-of-plane g factor for a single-hole quantum dot in this material. This experiment avoids the strong orbital effects present in the higher p-like orbitals in this configuration and validates the expected g-factor anisotropy. The results are in good agreement with calculations of the g factor using the heavy- and light-hole spaces of the Luttinger Hamiltonian, showing strong tunability through both the B field and the charge state.
|Appears in Collections:||電機工程學系|
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