https://scholars.lib.ntu.edu.tw/handle/123456789/633176
標題: | X-Ray Detectors Based on Amorphous InGaZnO Thin Films | 作者: | Huang, Wen Chun Tseng, Zi Chun WEN-JENG HSUEH Liao, Su Yu Huang, Chun Ying |
關鍵字: | Dark current | Detectors | Indium–gallium–zinc oxide (IGZO) | Performance evaluation | Photoconductivity | Photonic band gap | post-annealing | Sensitivity | X-ray detectors | X-ray detectors | 公開日期: | 1-一月-2023 | 卷: | 70 | 期: | 7 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | Indium–gallium–zinc oxide (IGZO) photodetectors have been mostly studied in the ultraviolet region and rarely in the X-ray region. This study fabricates IGZO X-ray detectors on glass substrates using different post-deposition annealing (PDA) times. The photo-to-dark current ratio increases significantly from 2.6 to 392.3 after PDA because of a considerable reduction of the deep-level states. There are fewer residual electrons in the conduction band and recombination centers in the middle of the bandgap are eliminated. An IGZO X-ray detector with optimal PDA time has a sensitivity of 8.5 |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/633176 | ISSN: | 00189383 | DOI: | 10.1109/TED.2023.3279054 |
顯示於: | 工程科學及海洋工程學系 |
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