https://scholars.lib.ntu.edu.tw/handle/123456789/633375
標題: | Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals | 作者: | Tsai, Y. T. Basu, Nilabh Chen, T.-W. Chan, Y. C. Lin, H.-Y. Chen, S. C. Lee, M. H. MING-HAN LIAO |
關鍵字: | 3-D integrated circuit (3-DIC) | carbon nanotubes (CNTs) | Catalysts | contact resistance | Contact resistance | Electrical resistance measurement | Electrodes | floating catalyst | Iron | Metals | Silicon | through Si vias (TSVs) | 公開日期: | 1-一月-2023 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | In this work, we investigate the contact resistance between carbon nanotubes (CNTs) and different metal electrodes (In, Cr, Cu, Ni, W, and Bi) grown by two methods: floating catalyst chemical vapor deposition (FCCVD) and thin Fe metal chemical vapor deposition (CVD). The results demonstrate that CNTs grown by FCCVD have lower contact resistance with metal electrodes compared to those grown by thin Fe metal CVD. The study attributes this to the avoidance of metal-silicide formation between the silicon (Si) substrate and the metal catalyst film during the high-temperature growing process in FCCVD. Moreover, the research shows that the FCCVD method results in a higher CNT density grown in the through Si vias (TSVs) and lower contact resistance between metal electrodes and CNTs, moving toward the 3-D integrated circuits (3-DICs). Further, the use of metals with good wettability such as bismuth (Bi) as the metal electrode reduces contact resistance. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/633375 | ISSN: | 00189383 | DOI: | 10.1109/TED.2023.3280439 |
顯示於: | 機械工程學系 |
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