https://scholars.lib.ntu.edu.tw/handle/123456789/633750
標題: | Design of AlInAs/GaAsSb/InGaAsSb Double Heterojunction Bipolar Transistors for The Unit Current Gain Cutoff Frequency of 850GHz | 作者: | Liu, Yun Hao Liao, Yu Tzu JIAN-JANG HUANG YUH-RENN WU |
關鍵字: | current gain | fT | graded emitter | graded InGaAsSb base | InP DHBTs | ledge layer | 公開日期: | 1-一月-2022 | 來源出版物: | 2022 Compound Semiconductor Week, CSW 2022 | 摘要: | In this work, the design of double heterojunction bipolar transistors (DHBTs) is to improve the unit current gain cutoff frequency (fT). We proposed using a compositionally graded emitter and adding a ledge layer between the base and the emitter to enhance fT. These results exhibit the high fT of these DHBTs. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/633750 | ISBN: | 9781665453400 | DOI: | 10.1109/CSW55288.2022.9930118 |
顯示於: | 電機工程學系 |
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