https://scholars.lib.ntu.edu.tw/handle/123456789/633797
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheng, Hao Tien | en_US |
dc.contributor.author | Qiu, Junyi | en_US |
dc.contributor.author | Peng, Chun Yen | en_US |
dc.contributor.author | Kuo, Hao Chung | en_US |
dc.contributor.author | Feng, Milton | en_US |
dc.contributor.author | CHAO-HSIN WU | en_US |
dc.date.accessioned | 2023-07-17T07:16:47Z | - |
dc.date.available | 2023-07-17T07:16:47Z | - |
dc.date.issued | 2022-12-19 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/633797 | - |
dc.description.abstract | The fabrication processes of high-speed oxide-confined single-mode (SM)-verticalcavity surface-emitting lasers (VCSELs) are complex, costly, and often held back by reliability and yield issues, which substantially set back the high-volume processing and mass commercialization of SM-VCSELs in datacom or other applications. In this article, we report the effects of Al2O3 passivation films deposited by atomic layer deposition (ALD) on the mesa sidewalls of high-speed 850-nm SM-VCSELs. The ALD-deposited film alleviates the trapping of carriers by sidewall defects and is an effective way to improve the performance of SM-VCSELs. The ALD-passivated SM-VCSELs showed statistically significant static performance improvements and reached a believed to be record-breaking SM-modulation bandwidth of 29.1 GHz. We also propose an improved microwave small-signal equivalent circuit model for SM-VCSELs that accounts for the losses attributed to the mesa sidewalls. These findings demonstrate that ALD passivation can mitigate processing-induced surface damage, enhance the performance of SM-VCSELs, and enable mass production of high-quality SM-VCSELs for mid- to long-reach optical interconnects. | en_US |
dc.language.iso | en | en_US |
dc.relation.ispartof | Optics Express | en_US |
dc.title | 29 GHz single-mode vertical-cavity surface-emitting lasers passivated by atomic layer deposition | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1364/OE.474930 | - |
dc.identifier.pmid | 36558682 | - |
dc.identifier.scopus | 2-s2.0-85144117716 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85144117716 | - |
dc.relation.journalvolume | 30 | en_US |
dc.relation.journalissue | 26 | en_US |
dc.relation.pageend | 47566 | en_US |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.openairetype | journal article | - |
item.languageiso639-1 | en | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Program in Semiconductor Device, Material, and Hetero-integration | - |
crisitem.author.orcid | 0000-0001-7849-773X | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Graduate School of Advanced Technology | - |
Appears in Collections: | 電機工程學系 |
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