https://scholars.lib.ntu.edu.tw/handle/123456789/634349
標題: | Energy-and Area-Efficient 8T SRAM Cell with FEOL CFETs and BEOL-Compatible Transistors | 作者: | Lee, Ming Huang, Zi Yuan Fan, Shao Fu Lu, Yu Cheng VITA PI-HO HU |
公開日期: | 1-一月-2022 | 卷: | 2022-December | 來源出版物: | Technical Digest - International Electron Devices Meeting, IEDM | 摘要: | High energy efficiency and capacity embedded SRAMs are essential for data-centric applications. CFET is remarkably scalable and has been proven to maintain the SRAM scaling track compared to nanosheet (NS) FET. However, the 6T CFET SRAM still suffers the read/write conflict and requires assist-circuits. This paper proposed an optimized 8T CFET -{ mathrm {{BEOL}}} SRAM cell integrated with FEOL CFETs and BEOL-compatible transistors. Compared to the 6T NS SRAM, the optimized 8T CFET-{ mathrm {{BEOL}}} SRAM cell shows 40% cell area reduction, 2.2 times higher RSNM, 1.68 times larger WSNM, 53% reduction in cell read access time, 27.8% decrease in dynamic energy, and 65.7% improvements in energy-delay product. The proposed energy-and area-efficient 8T CFET-{ mathrm {{BEOL}}} SRAM with fast speed, low dynamic energy, and superior stability could be promising candidates for high throughput data-centric applications. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/634349 | ISBN: | 9781665489591 | ISSN: | 01631918 | DOI: | 10.1109/IEDM45625.2022.10019543 |
顯示於: | 電機工程學系 |
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