https://scholars.lib.ntu.edu.tw/handle/123456789/634349
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, Ming | en_US |
dc.contributor.author | Huang, Zi Yuan | en_US |
dc.contributor.author | Fan, Shao Fu | en_US |
dc.contributor.author | Lu, Yu Cheng | en_US |
dc.contributor.author | VITA PI-HO HU | en_US |
dc.date.accessioned | 2023-08-01T07:38:59Z | - |
dc.date.available | 2023-08-01T07:38:59Z | - |
dc.date.issued | 2022-01-01 | - |
dc.identifier.isbn | 9781665489591 | - |
dc.identifier.issn | 01631918 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/634349 | - |
dc.description.abstract | High energy efficiency and capacity embedded SRAMs are essential for data-centric applications. CFET is remarkably scalable and has been proven to maintain the SRAM scaling track compared to nanosheet (NS) FET. However, the 6T CFET SRAM still suffers the read/write conflict and requires assist-circuits. This paper proposed an optimized 8T CFET -{ mathrm {{BEOL}}} SRAM cell integrated with FEOL CFETs and BEOL-compatible transistors. Compared to the 6T NS SRAM, the optimized 8T CFET-{ mathrm {{BEOL}}} SRAM cell shows 40% cell area reduction, 2.2 times higher RSNM, 1.68 times larger WSNM, 53% reduction in cell read access time, 27.8% decrease in dynamic energy, and 65.7% improvements in energy-delay product. The proposed energy-and area-efficient 8T CFET-{ mathrm {{BEOL}}} SRAM with fast speed, low dynamic energy, and superior stability could be promising candidates for high throughput data-centric applications. | en_US |
dc.relation.ispartof | Technical Digest - International Electron Devices Meeting, IEDM | en_US |
dc.title | Energy-and Area-Efficient 8T SRAM Cell with FEOL CFETs and BEOL-Compatible Transistors | en_US |
dc.type | conference paper | en_US |
dc.identifier.doi | 10.1109/IEDM45625.2022.10019543 | - |
dc.identifier.scopus | 2-s2.0-85147492622 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85147492622 | - |
dc.relation.journalvolume | 2022-December | en_US |
dc.relation.pageend | 1524 | en_US |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.cerifentitytype | Publications | - |
item.openairetype | conference paper | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Program in Semiconductor Device, Material, and Hetero-integration | - |
crisitem.author.orcid | 0000-0002-6216-214X | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Graduate School of Advanced Technology | - |
顯示於: | 電機工程學系 |
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