Low-temperature & high yield transfer approaches for embedding the 4th generation semiconductor Ga2O3on the high thermal conductive substrate
Journal
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
ISBN
9798350334166
Date Issued
2023-01-01
Author(s)
Abstract
β-Ga2O3 has superior electrical properties for application in power electronics but only a moderate thermal conductivity. To maximize the performance of Ga2O3 based electronics, an additional thermal management will be needed. In this work, we demonstrate the high-yield process of embedding thin-film Ga2O3 with the use of graphene-based high thermal conductive adhesive (ρc=54 WmK). The graphene-based adhesive provides good adhesion and thermal conduction path for the thermal management approach. More than 20 % reduction in operation temperature is observed by the renovation of transferred thin-film Ga2O3 device structures and the adhesion and transfer procedure for large area integration of β-Ga2O3.
Type
conference paper