https://scholars.lib.ntu.edu.tw/handle/123456789/634630
標題: | Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels | 作者: | Chiu, Jih Chao Liu, Yuan Ming Sarkar, Eknath Chen, Yu Ciao Fan, Yu Cheng Yen, Chia Chun Chen, Tsang Long Chou, Cheng Hsu CHEE-WEE LIU |
關鍵字: | Amorphous InGaZnO (a-IGZO) | band alignment | Etching | Hysteresis | In-Ga-Zn-O | mobility enhancement | Plasma temperature | quantum well | Scattering | Stress | Thin film transistors | thin-film transistor (TFT) | triple layers (TLs) | Tunneling | 公開日期: | 1-一月-2023 | 卷: | 70 | 期: | 8 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | The back-channel-etch-type amorphous InGaZnO (a-IGZO) triple-layer thin-film transistor (TL-TFT) consists of a top barrier and a bottom barrier deposited with oxygen flow (OF) and an a-IGZO main channel deposited without OF in between. The TL-TFT has 1.7 |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/634630 | ISSN: | 00189383 | DOI: | 10.1109/TED.2023.3283947 |
顯示於: | 電機工程學系 |
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