https://scholars.lib.ntu.edu.tw/handle/123456789/634790
標題: | Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices | 作者: | Ling, Chen Hsiang Mo, Chi Lin Chuang, Chun Ho Shyue, Jing Jong MIIN-JANG CHEN |
公開日期: | 1-一月-2023 | 來源出版物: | Journal of Materials Chemistry C | 摘要: | In this article, aluminum nitride (AlN) resistive random access memory (RRAM) devices are fabricated and investigated. To improve the resistive switching performance, the atomic layer annealing (ALA) technique, which is an energy transfer process by the in situ plasma treatment introduced into atomic layer deposition, was used to modulate the film quality of the AlN switching layer with a thickness of only 3.3 nm. The ALA treatment is capable of tailoring nitrogen vacancies in the AlN layer with monolayer accuracy, leading to a decrease in the operating voltage and an improvement in uniformity of the resistive switching characteristics. In addition, the AlN RRAM devices exhibit pulse endurance over 104 cycles and retention of more than 106 s at 125 °C. The result demonstrates that the resistive switching properties of RRAMs can be controlled by the precise atomic layer engineering of each monolayer. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/634790 | ISSN: | 20507526 | DOI: | 10.1039/d3tc00542a |
顯示於: | 材料科學與工程學系 |
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