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  4. Low-Temperature and Pressureless Cu-to-Cu Bonding by Electroless Pd Plating using Microfluidic System
 
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Low-Temperature and Pressureless Cu-to-Cu Bonding by Electroless Pd Plating using Microfluidic System

Journal
Proceedings - Electronic Components and Technology Conference
Journal Volume
2023-May
ISBN
9798350334982
Date Issued
2023-01-01
Author(s)
Shih, Po Shao
Huang, Jeng Hau
Shen, Chang Hsien
Lin, Yu Chun
Grufner, Simon Johannes
Renganathan, Vengudusamy
Kao, Chin Li
LIN, Y. S.
Hung, Yun Ching
Chiang, Chun Wei
C. ROBERT KAO  
DOI
10.1109/ECTC51909.2023.00102
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/635042
URL
https://api.elsevier.com/content/abstract/scopus_id/85168311977
Abstract
Recently, 3D-IC technology has been implemented for finer pitch and higher interconnect density over the past decades. Among all Cu-to-Cu bonding technologies, the microfluidic electroless interconnection (MELI) process can directly fabricate full-metal Cu pillar joints at temperatures below 100°C and without applying any pressure on the chips. The vertical interconnections are formed by a forced flow of electroless plating solution through a microchannel so that the reduced atoms self-assemble between the gaps of two facing Cu pillars. Our previous research shows that the MELI process using electroless Ni(P), Cu, and Au could form vertical interconnection uniformly under controlled flow. This study extends the MELI process's application range to 5G generation usage with electroless Pd. Using electroless Pd allows a more significant skin depth than other plating materials, causing less signal loss and delay during high-frequency transmission. In this study, highly uniform electroless-Pd-bonded Cu pillar joints were fabricated in a patterned microfluidic system of around 70°C. The bonded pillars were analyzed by scanning electron microscope. In addition, the cross-section images were further investigated by a focused ion beam to confirm the bonding interface. A TEM analysis examined the bonding characteristics. Epitaxial growth of deposited Pd along the Cu pillar's surface orientation was demonstrated, indicating enhanced electrical properties for future high-frequency applications. Furthermore, the die shear test verified a shear strength of around 55 MPa of the electroless-Pd-bond. This method might be a potential candidate for future low-stress and low-thermal-budget bonding.
Subjects
3D integration | Electroless plating | low-temperature bonding | Microfluidic system | Pressure free bonding
Type
conference paper

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