Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications
Journal
Discover Nano
Journal Volume
18
Journal Issue
1
Date Issued
2023-12-01
Author(s)
Hsiao, Fu He
Lee, Tzu Yi
Miao, Wen Chien
Pai, Yi Hua
Iida, Daisuke
Lin, Chun Liang
Chen, Fang Chung
Chow, Chi Wai
Horng, Ray Hua
He, Jr Hau
Ohkawa, Kazuhiro
Hong, Yu Heng
Chang, Chiao Yun
Kuo, Hao Chung
Abstract
In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.
Subjects
Micro-LED | Red InGaN-based LED | Visible light communication
Type
journal article