|Title:||Continuous-wave and time-resolved photoluminescence of GaN LED grown on amorphous SiC buffer||Authors:||Cheng, Chih Hsien
Feng, Zhe Chuan
|Issue Date:||1-Jan-2016||Source:||Optics InfoBase Conference Papers||Abstract:||
GaN LED grown upon amorphous SiC buffer is demonstrated. Its PL peak is redshifted to 442 nm because of the decreased compressive strain induced by lattice mismatch when changing the SiC buffer to C-rich condition.
|Appears in Collections:||電機工程學系|
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