Ultrathin HfON trapping layer for charge-trap memory made by atomic layer deposition
Journal
IEEE Electron Device Letters
Journal Volume
31
Journal Issue
9
Date Issued
2010-09-01
Author(s)
Abstract
Charge storage characteristics of a hafnium oxynitride (HfON) charge-trapping layer prepared by atomic layer deposition in a metal-Al 2O3 HfON-SiO2-Si(MAHNOS) structure are investigated. We found that an ultrathin HfON (∼2.5 nm) embedded in MAHNOS has large memory window (∼7.5 V at Vg= ±15 V), sufficient erase speed (Δ VFB=4V at 16 V/1 ms), and satisfactory data retention. From the relation of erase transient current density (J) versus tunnel oxide e-field (ETUN), we also found that the erase mechanism of MAHNOS depends on electron detrapping from HfON to Si substrates. However, MAHNOS embedding with a thicker HfON shows a poor data retention due to the increase of crystallization of the trapping layer. © 2010 IEEE.
Subjects
Atomic layer deposition (ALD) | charge-trapping memory | hafnium oxynitride (HfON)
Type
journal article