https://scholars.lib.ntu.edu.tw/handle/123456789/635781
標題: | Nanostructure Control of GaN by Electrochemical Etching for Enhanced Perovskite Quantum Dot LED Backlighting | 作者: | Huang, Wen-Tse Hong, Ling-Xuan RU-SHI LIU |
關鍵字: | LED backlighting; electrochemical etching mechanism; hybrid nanostructure; perovskite quantum dots; porous tunability | 公開日期: | 23-八月-2023 | 卷: | 15 | 期: | 33 | 起(迄)頁: | 39505 | 來源出版物: | ACS applied materials & interfaces | 摘要: | Upgraded technology has realized miniaturization and promoted transformation in each field. Miniaturized light-emitting diode (LED) chips enable higher resolution and create a full sense of immersion in displays. Porous GaN is a structure that can reduce excitation light leakage and enhance the light conversion efficiency. Perovskite quantum dots with the highest optical density as candidate materials for loading in pores can significantly decrease the aggregation phenomenon and increase the path of light absorption. Here, the porous tunability is explored by electrochemical etching under a range of voltages, concentrations, and etching times with acid and base electrolytes, such as oxalic acid and potassium hydroxide. Based on scanning electron microscopy images, the distribution of the pores and the morphology of pore channels can be distinguished under acid and base etching. Larger pore sizes and distorted channels (∼680 nm) are presented on the oxalic acid-etched GaN chip. In contrast, smaller pore sizes and straight-deeper channels (∼5650 nm) are demonstrated on the GaN by potassium hydroxide etching. Therefore, the hybrid nanostructure is etched by oxalic acid and potassium hydroxide, separately. The green and red light conversion efficiencies of perovskite quantum dots pumped by a blue LED can be improved by 3 and 10 times, respectively, resulting in a color gamut of approximately 124%. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/635781 | ISSN: | 19448244 | DOI: | 10.1021/acsami.3c06257 |
顯示於: | 化學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。