Extremely High-κ Hf0.2Zr0.8O2Gate Stacks Integrated into Ge0.95Si0.05Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V
Journal
Digest of Technical Papers - Symposium on VLSI Technology
Journal Volume
2023-June
ISBN
9784863488069
Date Issued
2023-01-01
Author(s)
Liu, Yi Chun
Chen, Yu Rui
Chen, Yun Wen
Lin, Hsin Cheng
Hsieh, Wan Hsuan
Tu, Chien Te
Huang, Bo Wei
WEI-JEN CHEN
Cheng, Chun Yi
Chueh, Shee Jier
Abstract
By taking advantage of the extremely high dielectric constant (κ) of 47, the Hf0.2 Zr0.8O2 gate stacks with ultralow EOT/CET of 0.62 / 0.87 nm are integrated into the 8 stacked high mobility Ge0.95Si0.05 channels with low thermal budget (≤ 450°C) to significantly enhance the IoN. The simulation of κ vs [Zr] in HZO confirms that the κ can be peaked at [Zr]=80 %. The 8 stacked Ge0.95Si0.05 nanowires and nanosheets achieve the record ION per footprint of 9200 μ A / μ m and the record ION per stack of 360 μ A at VOV=VDS=0.5 V, respectively, among all Si / GeSi / Ge 3 D nFETs. Moreover, the significant gate delay improvement by combining the extremely high-κ gate stacks and the large floor number is confirmed by simulation.
Type
conference paper