https://scholars.lib.ntu.edu.tw/handle/123456789/636612
Title: | Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations | Authors: | Chen, Ying Chuan Chao, Yu Ting Chen, Edward CHAO-HSIN WU YUH-RENN WU |
Keywords: | Physics - Materials Science; Physics - Materials Science; physics.app-ph; Physics - Computational Physics | Issue Date: | 1-Sep-2023 | Journal Volume: | 7 | Journal Issue: | 9 | Source: | Physical Review Materials | Abstract: | Resistive memory based on two-dimensional (2D) tungsten disulfide (WS2), molybdenum disulfide (MoS2), and hexagonal boron nitride (h-BN) materials is studied via experiments and simulations. The influence of the active layer thicknesses is discussed, and the thickness with the best on/off ratio is found for 2D resistive random-access memory (RRAM). This work reveals fundamental differences between a 2D RRAM and conventional oxide RRAM. Furthermore, the physical parameters extracted using the kinetic Monte Carlo (KMC) model indicate that 2D materials have a lower diffusion activation energy along the vertical direction, where a smaller bias voltage and a shorter switching time can be achieved. The diffusion activation energy from the chemical vapor deposition (CVD)-grown sample is much lower than for mechanically exfoliated samples. The results suggest that MoS2 has the fastest switching speed among the three considered 2D materials. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/636612 | ISSN: | 2475-9953 | DOI: | 10.1103/PhysRevMaterials.7.094001 |
Appears in Collections: | 電機工程學系 |
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