High-Power and Small-size CMOS T/R Switch Using Stacked Inductor
Journal
2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023
ISBN
9798350324402
Date Issued
2023-01-01
Author(s)
Abstract
This paper presents a miniaturized high-power handling CMOS T/R switch. The chip size can be miniaturized by adapting the stacked inductor to compensate for the non-ideal switching characteristics of the transistors in both transmit and receive paths for the asymmetric T/R switch. The minimum insertion loss is 1.8 dB, and 1-dB bandwidth is 68% from 19.5 GHz to 39.5 GHz in Tx mode. For the Rx mode, the minimum insertion loss is 2 dB, and the 1-dB bandwidth is 51% from 25 GHz to 42 GHz. The measured Tx mode IP1dB is 30 dBm at 28 GHz and more than 25 dBm within the operating bandwidth.
Subjects
asymmetric T/R switch | CMOS | high-power | stacked inductor
Type
conference paper