Area-Selective Growth of Two-Dimensional Mono- And Bilayer WS2 for Field Effect Transistors
Journal
ACS Materials Letters
Journal Volume
5
Journal Issue
6
Date Issued
2023-06-05
Author(s)
Huang, Lin Yun
Li, Ming Yang
Liew, San Lin
Lin, Shih Chu
Chou, Ang Sheng
Hsu, Ming Chun
Hsu, Ching Hao
Lin, Yu Tung
Mao, Po Sen
Hou, Duen Huei
Liu, Wei Cheng
Chang, Wen Hao
Wang, Han
Li, Lain Jong
Wei, Kung Hwa
Abstract
Herein, we propose a novel approach for area-selective tunable growth of uniform monolayer or bilayer WS2 on dielectric substrates through in situ conversion of a predeposited W metal pad to WOx initially and then to WS2 mono- and bilayers. Compared with the various transfer methods that have been used previously for multilayer stacking, this direct-growth method has the advantages of producing cleaner interfaces and the capability of growing tunable layers on target substrates, thereby making it more suitable for manufacturing processes. The WS2 bilayer displayed uniform optical properties, with the atomic arrangement between layers having an AA stacking order that are supposed to have higher mobility. We adopted these WS2 monolayers and bilayers in field-effect transistors. Accordingly, this approach for highly area-selective growth of transition metal dichalcogenide monolayers and bilayers with metal pads and their in situ conversion appears to provide effective platforms for further device applications.
SDGs
Type
journal article