https://scholars.lib.ntu.edu.tw/handle/123456789/639420
標題: | Current Gain Enhancement at High-Temperature Operation of Triple-Quantum-Well Heterojunction Bipolar Light-Emitting Transistor for Smart Thermal Sensor Application | 作者: | Kumar, Mukul Ho, Shu Yun Hsu, Shu Jui Li, Pin Chia SHU-WEI CHANG CHAO-HSIN WU |
關鍵字: | InGaP/GaAs | light-emitting transistors (LETs) | quantum-well single-heterojunction bipolar transistors (QW-HBTs) | temperature | temperature-dependent current gain | thermal sensor | TQW heterojunction bipolar light-emitting transistors (TQW-HBLETs) | TQW heterojunction bipolar transistors (TQW-HBTs) | triple-quantum-well (TQW) | 公開日期: | 1-一月-2024 | 卷: | 71 | 期: | 1 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | In this article, we present an investigation into the amplification characteristics of triple-quantum-well heterojunction bipolar light-emitting transistors (TQW-HBLETs or TQW-HBTs or TQW-LETs) at varying ambient temperatures. Our analysis involves a modified charge-control model that integrates the idea of thermionic emission of electrons from the TQWs, which are strategically positioned within the base region of HBTs. Both experimental measurements and simulations demonstrate that the minority carrier within the TQWs acquires greater energy at higher operating temperatures, facilitating its rapid escape from the TQWs due to a reduced escape time. Interestingly, this phenomenon leads to a distinct augmentation in the current gain, contrary to the conventional behavior observed in HBTs. Specifically, we observed a remarkable increase in current gain of approximately 200%, when the operating temperature of TQW-HBTs is elevated from 25 °C to 85 °C. Notably, the experimental findings align consistently with the outcomes obtained through simulations. Consequently, our study presents a compelling case for the application of light-emitting transistors (LETs) in the design of cutting-edge smart thermal sensors, illustrating their promising potential in the front end of such systems. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/639420 | ISSN: | 00189383 | DOI: | 10.1109/TED.2023.3339084 |
顯示於: | 電機工程學系 |
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