A W-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated Passive Device
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
31
Journal Issue
6
Date Issued
2021-06-01
Author(s)
Abstract
This work presents an on-chip Wilkinson power divider using silicon-based integrated passive device (IPD) technology that operates from 70 to 110 GHz, thereby covering the entire W-band (75-110 GHz). Based on a simple impedance transformation different from the conventional Wilkinson power divider topology, the proposed silicon IPD power divider with a core size of 0.417 mm2 can demonstrate power loss of less than 1.1 dB along with input-output return loss better than 14 dB throughout the entire band.
Subjects
Integrated passive device (IPD) | millimeter-wave (mm-wave) | on-chip coupler | W-band | Wilkinson power divider
SDGs
Type
journal article