https://scholars.lib.ntu.edu.tw/handle/123456789/640574
標題: | Monolithically integrated 940 nm VCSELs on bulk Ge substrates | 作者: | Wan, Zeyu Yang, Yun Cheng Chen, Wei Hsin Chiu, Chih Chuan Zhao, Yunlong Feifel, Markus Chrostowski, Lukas Lackner, David CHAO-HSIN WU Xia, Guangrui |
公開日期: | 12-二月-2024 | 卷: | 32 | 期: | 4 | 來源出版物: | Optics Express | 摘要: | This research successfully developed an independent Ge-based VCSEL epitaxy and fabrication technology route, which set the stage for integrating AlGaAs-based semiconductor devices on bulk Ge substrates. This is the second successful Ge-based VCSEL technology reported worldwide and the first Ge-based VCSEL technology with key details disclosed, including Ge substrate specification, transition layer structure and composition, and fabrication process. Compared with the GaAs counterparts, after epitaxy optimization, the Ge-based VCSEL wafer has a 40% lower surface root-mean-square roughness and 72% lower average bow-warp. After device fabrication, the Ge-based VCSEL has a 10% lower threshold current density and 19% higher maximum optical differential efficiency than the GaAs-based VCSEL. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/640574 | ISSN: | 1094-4087 | DOI: | 10.1364/OE.513997 |
顯示於: | 電機工程學系 |
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