Robust Recovery Scheme for MFIS-FeFETs at Optimal Timing with Prolonged Endurance: Fast-Unipolar Pulsing (100 ns), Nearly Zero Memory Window Loss (0.02 %), and Self-Tracking Circuit Design
Journal
Technical Digest - International Electron Devices Meeting, IEDM
ISBN
9798350327670
Date Issued
2023-01-01
Author(s)
Abstract
This work systematically demonstrates a novel recovery scheme for MFIS-FeFET memory arrays involving device fabrication and circuit integration. For the first time, the timing to initiate recovery to prolong the endurance of FeFETs is studied. A 100-ns fast-unipolar pulsing (FUP) recovery treatment at optimized timing is demonstrated with significantly extending endurance cycles by a factor of 102, together with a nearly zero loss (0.02 %) in memory window (MW) per recovery period and a low MW fluctuation. An ultra-low recovery-induced time loss ratio of 5×10-5 % is achieved. Based on the developed scheme, we propose a self-tracking recovery circuit design utilizing current-mode memory sensing to monitor the degree of fatigue and automatically trigger the recovery operation.
Type
conference paper