https://scholars.lib.ntu.edu.tw/handle/123456789/641736
標題: | Recent progress in undoped group-IV heterostructures for quantum technologies | 作者: | Tai, Chia Tse JIUN-YUN LI |
關鍵字: | effective mass | g-factors | mangeto-transport properties | quantum technologies | spin-orbit coupling | surface tunneling | two-dimensional electron/hole gas | 公開日期: | 1-三月-2024 | 卷: | 4 | 期: | 1 | 來源出版物: | Materials for Quantum Technology | 摘要: | Silicon has been a core material for digital computing owing to its high mobility, stability oxide interface, mature manufacturing technologies for more than half a century. While Moore’s law seems to further advance via various technologies to extend its expiration date, some intractable problems that requires processing times growing exponentially cannot be solved in a reasonable scale of time. Meanwhile, quantum computing is a promising tool to perform calculations much more efficiently than classical computing for certain types of problems. To realize a practical quantum computer, quantum dots on group-IV semiconductor heterostructures are promising due to the long decoherence time, scalability, and compatibility with the Si very-large-scale integrated technology. In this review, we start with the advancement of group-IV undoped heterostructures since 2000 and review carrier transport properties in these undoped heterostructure. We also review the hole effective masses, spin-orbit coupling, and effective g-factors in the Ge-based heterostructures and conclude with a brief summary. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/641736 | ISSN: | 2633-4356 | DOI: | 10.1088/2633-4356/ad2980 |
顯示於: | 電機工程學系 |
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