次世代半導體技術氮化硼薄膜前驅物與原子層沉積製程之開發

Project title

次世代半導體技術氮化硼薄膜前驅物與原子層沉積製程之開發

Internal ID

編號：112CC-2-01

Principal Investigator

Start Date

May 1, 2023

End Date

April 30, 2024

Organizations

Materials Science and Engineering

Partner Organizations

Southern Taiwan Science Park Bureau, MOST