Monolithically Integrated 940 nm VCSELs on Bulk Ge Substrates
Part Of
IEEE International Conference on Group IV Photonics GFP2024
ISBN (of the container)
979-835039404-7
Date Issued
2024-04-15
Author(s)
Zeyu Wan
Yun-Cheng Yang
Wei-Hsin Chen
Chih-Chuan Chiu
Yunlong Zhao
Markus Feifel
Lukas Chrostowski
David Lackner
Guangrui Xia
Abstract
This work successfully developed an independent Ge-VCSEL epitaxy and fabrication technology route. This is the second successful Ge-VCSEL technology reported worldwide, and the first Ge-VCSEL technology with key details disclosed, including Ge substrate specification, transition layer structure and composition, and fabrication process etc. Compared with the GaAs counterparts, after epitaxy optimization, the Ge-VCSEL wafer has a 40% lower surface root-mean square roughness and 72% lower average bow-warp. Additionally, the Ge-VCSEL has a 10% lower threshold current density and a 19% higher maximum slope efficiency than the GaAs-VCSEL.
Event(s)
2024 IEEE Silicon Photonics Conference, SiPhotonics 2024
Publisher
IEEE
Type
conference paper