Review of Silicon Carbide Processing for Power MOSFET
Journal
Crystals
Journal Volume
12
Journal Issue
2
Start Page
245
ISSN
2073-4352
Date Issued
2022-02-11
Author(s)
Catherine Langpoklakpam
An-Chen Liu
Kuo-Hsiung Chu
Lung-Hsing Hsu
Wen-Chung Lee
Shih-Chen Chen
Chia-Wei Sun
Min-Hsiung Shih
Hao-Chung Kuo
DOI
10.3390/cryst12020245
Abstract
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized
Subjects
Breakdown voltage
On-resistance
Power devices
SiC MOSFETs
Silicon (Si)
Silicon carbide (SiC)
Publisher
MDPI AG
Type
journal article