Unravelling p-n Conduction Transition in High Thermoelectric Figure of Merit Gallium-Doped Bi2Te3 via Phase Diagram Engineering
Journal
ACS Applied Energy Materials
Journal Volume
3
Journal Issue
2
Start Page
1311
End Page
1318
ISSN
25740962
Date Issued
2020
Author(s)
Abstract
We revisit the well-established Bi2Te3 via phase diagram engineering. Along with a phase diagram in hand, it is realized that the solubility of Ga in Bi2Te3 is coincident with the p-n transition zone in Ga-Bi2Te3 alloys. The best-performing n-type (Bi2Te3)0.93(Ga2Te5)0.07 possesses a peak zT 1.5 at 300 K, which is attributed to the reduced κ 1.8 W m-1 K-1 and the low-lying ρ. The p-type Bi1.99Ga0.01Te3 also exhibits a peak zT of 1.2 at 300 K. In other words, the addition of Ga leads to high-zT p-type or n-type bismuth-tellurides, which simplifies the conventional synthesis route that usually involves different dopants. Copyright © 2020 American Chemical Society.
Subjects
Bi2 Te3
figure of merit (zT)
p-n transition
phase diagram engineering
thermoelectric materials
Publisher
American Chemical Society
Type
journal article