Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment
Journal
ACS Applied Materials and Interfaces
Journal Volume
15
Journal Issue
12
Start Page
16153
End Page
16161
ISSN
19448244
Date Issued
2023
Author(s)
Chen, Wan-Hsin
Kawakami, Naoya
Hsueh, Jing-Wen
Kuo, Lai-Hsiang
Chen, Jiun-Yu
Liao, Ting-Wei
Kuo, Chia-Nung
Lue, Chin-Shan
Lai, Yu-Ling
Hsu, Yao-Jane
Lien, Der-Hsien
Hu, Chenming
Luo, Meng-Fan
Lin, Chun-Liang
Abstract
Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe2 and PdTe2 surfaces were decreased by more than 99%, giving a defect density <1.0 × 1010 cm-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes. © 2023 American Chemical Society.
Subjects
2D materials
defects
density functional theory
ion bombardment
reflection high-energy electron diffraction
scanning tunneling microscopy
synchrotron-based photoelectron spectroscopy
Publisher
American Chemical Society
Type
journal article