Revealing the Potential of Perovskite Transistors for Dual-Modulated Synaptic Behavior through Heterojunction Design
Journal
ACS Energy Letters
Journal Volume
9
Journal Issue
9
Start Page
4564
End Page
4571
ISSN
2380-8195
2380-8195
Date Issued
2024-09-13
Author(s)
Yu-Ting Yang
Yen-Han Shih
Qun-Gao Chen
Chiung-Han Chen
Ming-Hsuan Yu
Chia-Hsun Nieh
Bi-Hsuan Lin
Wen-Ya Lee
DOI
10.1021/acsenergylett.4c01784
Abstract
Recently, metal halide perovskites for neuromorphic information processing have emerged due to their attractive optoelectronic properties such as high photosensitivity and good charge transport. However, perovskites used as active channels in synaptic transistors have rarely been discussed due to the difficulty in controlling the charge-transporting properties. In this study, we realized electrically/optically modulated synaptic plasticity through a heterojunction design consisting of PEA2SnI4 and C60. By inserting an ultrathin polyethylenimine ethoxylated (PEIE) layer into the heterostructure, the PEA2SnI4 film quality is greatly improved and shows efficient charge-transporting behavior. In electrical modulation, synaptic potentiation and depression are simultaneously achieved by gate voltage modulation. In optical modulation, synaptic plasticity is realized under green light (530 nm) irradiation. Such dual-modulation charge-storage behavior is realized for the first time in perovskite transistors, revealing great potential for future neuromorphic intelligent applications.
SDGs
Publisher
American Chemical Society (ACS)
Type
journal article