Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors
Journal
ACS Applied Materials & Interfaces
Journal Volume
16
Journal Issue
1
Start Page
1066
End Page
1073
ISSN
1944-8244
1944-8252
1944-8244
Date Issued
2023-12-19
Author(s)
Yi-Te Lee
Yu-Ting Huang
Shao-Pin Chiu
Ruey-Tay Wang
Takashi Taniguchi
Kenji Watanabe
Raman Sankar
Wei-Hua Wang
Sheng-Shiuan Yeh
Juhn-Jong Lin
Abstract
Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics.
SDGs
Publisher
American Chemical Society (ACS)
Type
journal article