Effects of the Solid Concentration of Ceria Slurry on the Removal Rate and Selectivity of Si Wafer during Chemical Mechanical Polishing
Journal
Materials Science Forum
Journal Volume
1129
Start Page
53
End Page
58
ISSN
1662-9752
Date Issued
2024-10-30
Author(s)
DOI
10.4028/p-QyfWN3
Abstract
Shallow trench isolation via chemical mechanical polishing (CMP-STI) tests of Si wafers using CeO2 slurry were studied. The impact of CeO2 slurry's solid concentration on the SiO2 removal rate and the selectivity ratio The effects of the solid concentration of CeO2 slurry on the removal rate of SiO2 and selectivity (SiO2/Si3N4) were investigated. The CeO2 abrasive was well matched to the XRD standard pattern, confirming that it had a cubic phase and the absence of any impurities. The SEM image showed that CeO2 primary particles had a spherical-like shape with a size within 30-60 nm. Additionally, the prepared CeO2 slurry showed a relatively high dispersion level. The wettability degree of the CeO2 slurry on top of the Si wafer surface was also sufficient. Furthermore, results from polishing tests indicated that both the SiO2 removal rate and the selectivity increased linearly with a rise in CeO2 solid concentration.
Subjects
CeO2 abrasive
Chemical Mechanical Polishing
dispersant
removal rate
Shallow Trench Isolation
Publisher
Trans Tech Publications, Ltd.
Type
journal article