Interfacial charge trap engineering of organic semiconductors using reactive oxygen plasma for enhanced performance in phototransistor memory
Journal
Materials Today Chemistry
Journal Volume
42
Start Page
102445
ISSN
2468-5194
Date Issued
2024-12
Author(s)
DOI
10.1016/j.mtchem.2024.102445
Abstract
ignificant advancements have been observed in organic photonic field-effect transistors, primarily attributed to the swift evolution of conjugated materials. In this study, plasma oxidation is utilized as a surface modification strategy on a series of quinacridones (QA) based molecules to further exploit the performance of conjugated materials. Accordingly, alkylated QA is incorporated as a memory layer into the photonic field-effect transistor memory devices, with pentacene serving as the transport layer. The study aims to elucidate the correlation between functionalized interfaces and charge storage capacity. The findings indicate that plasma oxidation can elicit charge storage effects due to the formation of tertiary amine species and morphological modifications. The alkylated QA with an optimal chain length, subjected to a 10-s plasma oxidation process, demonstrates remarkable memory ratios reaching as high as 104. Additionally, the retention capabilities of these devices remain approximately 104 after a duration of 10,000 s, signifying substantial durability. These findings underscore the efficacy of plasma oxidation as a significant method for enhancing the operational performance of photonic field-effect transistor memory devices.
Subjects
Electret
Field-effect transistors
Photomemory
Plasma oxidation
Quinacridones
SDGs
Publisher
Elsevier BV
Type
journal article