Transferrable Alumina Membranes as High‐Performance Dielectric for Flexible 2D Materials Devices
Journal
Advanced Electronic Materials
Journal Volume
10
Journal Issue
6
Start Page
2300783
ISSN
2199-160X
2199-160X
Date Issued
2024-03-15
Author(s)
Abstract
2D materials have shown great promise for novel electronic functionality. A common challenge for 2D materials-based transistors is forming a high-performance gate terminal due to the challenges of depositing a dielectric of sufficient quality and controllable thickness. Herein the van-der-Waals integration of a free-standing Al2O3 dielectric membrane is demonstrated as a facile, scalable, and powerful gate dielectric. A process is developed that permits the wet transfer of an amorphous alumina layer with a finely adjustable equivalent oxide thickness (EOT) in the single nanometer range. Electrical characterization demonstrates the high breakdown field and low leakage of the dielectric and integration into 2D materials transistors reveals a high performance. The wafer-scale uniformity of the dielectric membrane permits the formation of large-scale flexible devices that exhibit good robustness and long-term stability.
Subjects
2D material transistors
alumina membranes
flexible devices
van-der-Waals dielectrics
Publisher
Wiley
Type
journal article